Publication
S. Li
J. He
P. Nachtigall
L. Grajciar
F. Brivio
Doping isolated one-dimensional antiferromagnetic semiconductor vanadium tetrasulfide (VS4) nanowires with carriers induces half-metallicity
Doping isolated one-dimensional antiferromagnetic semiconductor vanadium tetrasulfide (VS4) nanowires with carriers induces half-metallicity
Journal of Materials Chemistry C,
9(9),
2021
Reference
@article{Li2021,
author = "S. Li and J. He and P. Nachtigall and L. Grajciar and F. Brivio",
title = "Doping isolated one-dimensional antiferromagnetic semiconductor vanadium tetrasulfide ({VS}4) nanowires with carriers induces half-metallicity",
year = 2021,
journal = "Journal of Materials Chemistry C",
publisher = "Royal Society of Chemistry (RSC)",
volume = 9,
number = 9,
doi = "10.1039/d1tc00096a",
url = "https://doi.org/10.1039/d1tc00096a"
}